The 2SD1817-TL is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor. This semiconductor device is tailored for applications that require high-speed switching and amplification, making it a versatile component in various electronic circuits. With its robust design and reliable performance, the 2SD1817-TL is an excellent choice for designers and engineers looking to enhance the efficiency of their electronic projects.

Key Features

• High Current Capability: The 2SD1817-TL is capable of handling collector currents up to 1A, making it suitable for driving moderate loads in electronic circuits.
• Low Saturation Voltage: This transistor offers a low collector-emitter saturation voltage (V<sub>CE(sat)), which minimizes power loss and improves efficiency in switching applications.
• High-Speed Switching: With its fast switching times, the 2SD1817-TL is ideal for high-frequency operations, ensuring swift response times in control circuits.
• High Power Dissipation: It has a power dissipation rating of 900mW, allowing it to handle significant power levels without compromising performance.

Applications

The 2SD1817-TL is suitable for a wide range of applications, such as:

• Power management circuits
• DC/DC converters
• Motor control drivers
• Audio amplifiers
• Switching regulators

Product Specifications

Parameter Value Transistor Polarity NPN Collector-Base Voltage (VCBO) 80V Collector-Emitter Voltage (VCEO) 60V Emitter-Base Voltage (VEBO) 6V Collector Current (IC) 1A Power Dissipation (Pc) 900mW

The 2SD1817-TL transistor from ON Semiconductor is a robust and reliable component that offers a combination of high-speed switching, low power loss, and high current handling capabilities. Its comprehensive specifications and wide applicability make it a valuable addition to any electronic design project.