2SD1998-TD Bipolar Transistor from ON Semiconductor
The 2SD1998-TD is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is tailored to meet the requirements of various electronic applications, particularly those demanding high-speed switching and amplification.
Key Features
- High Current Capacity: This device is capable of handling a collector current (Ic) of up to 3A, making it suitable for medium power applications.
- Low Saturation Voltage: It offers a low collector-emitter saturation voltage (Vce(sat)), which results in reduced power loss and improved efficiency during operation.
- Fast Switching Speed: The 2SD1998-TD boasts a quick switching response time, which is essential for high-frequency applications.
- Complementary PNP Type: The transistor has a complementary PNP type available, providing design flexibility for push-pull configurations.
- High Reliability: ON Semiconductor’s commitment to quality ensures that this transistor exhibits high reliability and long operational life.
Applications
The versatile 2SD1998-TD transistor is ideal for use in a variety of electronic circuits. Some of the common applications include:
- Power supply circuits
- DC/DC converters
- Motor control circuits
- Audio amplifiers
- Switching regulators
Product Specifications
Parameter
Value
Transistor Polarity
NPN
Collector-Emitter Voltage (Vceo)
20V
Collector Current (Ic)
3A
Power Dissipation (Pd)
1W
DC Current Gain (hFE)
100 to 320
Operating Temperature
-55°C to +150°C
The 2SD1998-TD from ON Semiconductor is a testament to the company's dedication to providing components that enhance system performance while minimizing energy consumption. Its robustness and versatility make it an excellent choice for designers looking to optimize their electronic designs.