The 2SK3615-TL-E is a high-performance N-Channel MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet a wide range of applications, offering a robust and reliable solution for engineers and designers alike.

Key Features

• Low On-Resistance: The 2SK3615-TL-E boasts a low on-resistance, which translates to reduced losses during operation and enhances overall efficiency.
• High-Speed Switching: Engineered for high-speed switching applications, this MOSFET minimizes switching losses and is suitable for high-frequency power supplies and converters.
• High Drain-Source Voltage (Vdss): With a high drain-source voltage rating, it can handle up to 900V, making it ideal for high voltage applications.
• Low Drive Power: It requires low drive power, which makes it easier to control with simple drive circuits and contributes to energy savings.
• Enhanced Durability: The device is encapsulated in a RoHS-compliant, halogen-free package, ensuring long-term reliability and environmental sustainability.

Applications

The versatility of the 2SK3615-TL-E MOSFET allows it to be used in a variety of applications, including:

• Power Supply Units (PSUs)
• DC-DC Converters
• Motor Drives
• Inverters
• Switching Regulators
• Lighting Systems

Technical Specifications

Parameter Value Configuration Single Channel Mode Enhancement Channel Type N-Channel Drain-Source Voltage (Vdss) 900V Continuous Drain Current (Id) 4A Power Dissipation (Pd) 50W Operating Temperature Range -55°C to +150°C

With its advanced technology and superior performance, the 2SK3615-TL-E from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and reliability of their electronic applications.