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BC807-25LT1G

Part No BC807-25LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.5A SOT23 / Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 011078-BC807-25LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Automotive, Industrial
Family Name BC807-25L
Introduction Date October 09, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC807-25LT1G CAD Model

Description

ON Semiconductor BC807-25LT1G PNP Bipolar Transistor

The BC807-25LT1G from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This small-signal transistor is a part of ON Semiconductor's broad portfolio of discrete devices, known for their reliability and efficiency in various electronic circuits.

Key Features

  • Device Type: PNP Bipolar Transistor
  • Configuration: Single
  • Collector-Emitter Voltage (Vceo): -45V
  • Collector-Base Voltage (Vcbo): -50V
  • Emitter-Base Voltage (Vebo): -5V
  • Collector Current (Ic): -500mA
  • DC Current Gain (hFE): 100 to 600 at IC = -100mA
  • Power Dissipation (Pd): 250mW
  • Operating and Storage Junction Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23-3

Applications

The BC807-25LT1G is suitable for a wide range of applications, including but not limited to:

  • Low noise stages in audio equipment
  • Driver stages in hi-fi amplifiers and television circuits
  • Signal processing circuits in telecommunication devices
  • Switching loads up to 500mA

Performance Benefits

The BC807-25LT1G offers excellent amplification and switching characteristics, making it a versatile choice for designers. Its high current gain ensures effective amplification in various circuits, while the low voltage drop across the collector-emitter junction provides efficient operation and helps to minimize power losses. Additionally, its compact SOT-23-3 package makes it ideal for space-constrained applications.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The BC807-25LT1G is manufactured under stringent quality control standards, ensuring reliable performance and consistency across batches. Its robust construction allows for operation in a wide temperature range, making it suitable for challenging environmental conditions.

Whether you're designing consumer electronics, industrial control systems, or automotive applications, the BC807-25LT1G PNP bipolar transistor from ON Semiconductor is an excellent choice for efficient and reliable circuit operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,465+ $0.0342 $50.1030
3,560+ $0.0281 $100.0360
5,515+ $0.0272 $150.0080
7,605+ $0.0263 $200.0115
9,805+ $0.0255 $250.0275
13,160+ $0.0228 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 1465 pcs
Order Increment : 1 pcs
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