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Same model may have multiple batches, images only for reference.
SI4922BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4922BDY-T1-E3

Part No SI4922BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8-SOIC / Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
Datasheet
SI4922BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 16 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 2070pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028553-SI4922BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si4922BDY
Introduction Date March 14, 2007
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4922BDY-T1-E3 CAD Model

Description

The Vishay SI4922BDY-T1-E3 electronic component is a dual N-channel FET with a standard feature.

  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 3.1W
  • Continuous Drain Current @ 25°C: 8A
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Rds On at Id, Vgs: 16 mOhm @ 5A, 10V
  • Package: 8-SO
  • Maximum Gate Charge: 62nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9104 $52.3872
42+ $2.3881 $100.3002
65+ $2.3134 $150.3710
90+ $2.2388 $201.4920
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 850 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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