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Same model may have multiple batches, images only for reference.
IRF8910PBFCT Real Image
Same model may have multiple batches, images only for reference.

IRF8910PBFCT

Part No IRF8910PBFCT
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A 8-SOIC
Datasheet
IRF8910PBFCT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 13.4 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 960pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069427-IRF8910PBFCT
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8910PBFCT CAD Model

Description

The Infineon Technologies 069427-IRF8910PBFCT is a 2 N-Channel (Dual) Logic Level Gate FET with a drain-source breakdown voltage of 20V and a continuous drain current of 10A at 25°C.

  • Maximum Power Dissipation: 2W
  • Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V
  • Case/Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 11nC @ 4.5V
  • Packaging: Cut Reel
  • Popularity: Medium
  • Supply and Demand: Limited

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