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BC846AWT1G

Part No BC846AWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 65V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 110 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 1022419-BC846AWT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC846AWT1G CAD Model

Description

ON Semiconductor BC846AWT1G NPN Bipolar Transistor

The ON Semiconductor BC846AWT1G is a high-performance NPN bipolar (BJT) transistor that is designed to offer a balanced combination of features suitable for a wide range of applications. This small-signal transistor is part of the BC846 series and is well-suited for use in general-purpose switching and amplification tasks.

With its SOT-323 package, the BC846AWT1G is optimized for space-saving designs and is ideal for surface-mount technology (SMT), ensuring a compact footprint on printed circuit boards (PCBs). This feature makes it a preferred choice for modern electronic devices where space is at a premium.

Key Features:

  • Transistor Type: NPN - This type of transistor is commonly used for amplification and switching applications.
  • Collector-Emitter Voltage (Vceo): 65V - The maximum voltage between collector and emitter the transistor can withstand when the base is open-circuited.
  • Collector-Base Voltage (Vcbo): 80V - The maximum collector-base voltage, which is an important parameter for off-state endurance.
  • Emitter-Base Voltage (Vebo): 6V - The maximum emitter-base voltage permissible, which ensures safe operation when the collector is open.
  • Collector Current (Ic): 100mA - The maximum continuous collector current the device can handle, suitable for a range of low to moderate current applications.
  • Power Dissipation (Pd): 250mW - The amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 110 to 800 - A measure of the transistor’s amplification factor, indicating its efficiency in amplifying current.
  • Operating Temperature: -55°C to +150°C - A wide operating temperature range that ensures reliability in various environmental conditions.
  • Package / Case: SOT-323 - A small and efficient surface-mount package that helps in reducing PCB space requirements.

This ON Semiconductor transistor is manufactured with high-quality materials and is designed to offer reliable performance with a long operational life. The BC846AWT1G is an excellent choice for designers looking for a general-purpose NPN transistor that combines efficiency with durability. Whether you're working on consumer electronics, power management circuits, or signal processing, the BC846AWT1G is an essential component that provides flexibility and performance in a compact package.

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