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BC847BDW1T1G

Part No BC847BDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 011108-BC847BDW1T1G
Family Name BC847BDW1
Introduction Date October 07, 2002
ECCN EAR99
Country of Origin China, Japan
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian BC847BDW1T1G CAD Model

Description

ON Semiconductor BC847BDW1T1G Bipolar Transistor

The BC847BDW1T1G is a high-performance, dual NPN bipolar (BJT) transistor manufactured by ON Semiconductor, a leader in the semiconductor industry. This compact surface-mount transistor is designed for general-purpose and switching applications, offering a perfect blend of low-power consumption and efficient operation. The BC847BDW1T1G is housed in a small SOT-363 package, making it ideal for space-constrained applications.

With its dual NPN configuration, the BC847BDW1T1G allows for the creation of compact and efficient circuit designs, reducing the number of components required on a PCB. This transistor is capable of handling a collector current of up to 100 mA, which makes it suitable for a wide range of applications, from signal processing to power management.

Key features of the BC847BDW1T1G include a collector-emitter voltage (Vceo) of 45V, which ensures that the transistor can handle moderate voltage levels without breakdown. The device also boasts a collector-base voltage (Vcbo) of 50V and an emitter-base voltage (Vebo) of 5V. Its transition frequency (fT) is 100 MHz, which is indicative of its ability to operate at high frequencies, making it an excellent choice for RF and high-speed switching applications.

The BC847BDW1T1G also has a low collector-emitter saturation voltage, which translates to reduced power dissipation and improved efficiency. This feature is particularly beneficial in battery-powered devices, where energy conservation is paramount. Additionally, the transistor offers low noise figures, thereby enhancing the performance of audio and signal amplification circuits.

ON Semiconductor's commitment to environmental sustainability is evident in the BC847BDW1T1G, as it is compliant with RoHS (Restriction of Hazardous Substances) standards. This ensures that the product is free from harmful substances like lead, mercury, and cadmium, making it environmentally friendly and safe for use in a variety of consumer electronics.

In summary, the BC847BDW1T1G from ON Semiconductor is a versatile, high-performance dual NPN transistor that offers designers the flexibility and efficiency needed for modern electronic applications. Its compact form factor, combined with its impressive electrical characteristics, make it an ideal choice for a broad spectrum of uses in the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,100+ $0.0456 $50.1600
2,675+ $0.0374 $100.0450
4,145+ $0.0362 $150.0490
5,700+ $0.0351 $200.0700
7,375+ $0.0339 $250.0125
9,870+ $0.0304 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 130,020 pieces
MOQ: 1100 pcs
Order Increment : 1 pcs
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