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BC848BWT1

Part No BC848BWT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SC70-3 / Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 150 mW Surface Mount SC-70-3 (SOT323)
Datasheet
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Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Manufacturer onsemi
Packaging Reel - TR
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number BC848
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number ONSONSBC848BWT1,2156-BC848BWT1-ONTR
Standard Package 3,000
Win Source Part Number 1325643-BC848BWT1
Ultra Librarian 3D Model Ultra Librarian BC848BWT1 CAD Model

Description

ON Semiconductor BC848BWT1 NPN Bipolar Transistor

The ON Semiconductor BC848BWT1 is a high-performance NPN bipolar (BJT) transistor designed for use in a wide range of electronic applications. This small-signal transistor is well-suited for general-purpose switching and amplification tasks. With its compact SOT-323 package, the BC848BWT1 offers a space-saving solution for modern electronic circuits, making it an ideal choice for use in densely packed PCBs.

Key Features

  • Transistor Type: NPN
  • Package: SOT-323, a surface-mount package that provides excellent power dissipation and space efficiency.
  • Collector-Emitter Voltage (Vceo): 30V, which allows it to handle moderate voltage applications.
  • Collector Current (Ic): 100mA, suitable for a range of low to medium current applications.
  • DC Current Gain (hFE): 200 to 450 at 2mA, ensuring good amplification characteristics.
  • Power Dissipation: 200mW, which is suitable for various general-purpose applications without the need for additional heat sinking.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C, providing reliable performance over a wide range of temperatures.

Applications

The BC848BWT1 is versatile and can be used in various electronic circuits. It is commonly employed in:

  • Signal amplification circuits
  • Switching applications
  • Linear amplification stages
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Telecommunication devices

ON Semiconductor's BC848BWT1 offers a balance of performance and size, making it an excellent choice for designers looking for a reliable NPN transistor that does not compromise on power and efficiency. Whether for hobbyist projects or commercial products, the BC848BWT1 is a solid component that can help achieve stable and efficient circuit operation.

With its robust construction and ON Semiconductor's commitment to quality, the BC848BWT1 is a component that engineers can rely on for consistent performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,970+ $0.0293 $57.7210
4,785+ $0.0242 $115.7970
7,430+ $0.0233 $173.1190
10,205+ $0.0226 $230.6330
13,230+ $0.0219 $289.7370
17,650+ $0.0196 $345.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 1970 pcs
Order Increment : 1 pcs
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