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BC848BWT1G

Part No BC848BWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 011133-BC848BWT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC848BWT1G CAD Model

Description

ON Semiconductor BC848BWT1G NPN Bipolar Transistor

The ON Semiconductor BC848BWT1G is a high-performance NPN bipolar (BJT) transistor that is designed to meet the stringent requirements of modern electronic circuits. It is a versatile component that can be used in a wide range of applications, including switching and amplification purposes. This small-signal transistor is known for its low noise and high gain, making it an excellent choice for audio applications, signal processing, and other sensitive electronic systems.

The BC848BWT1G comes in a compact SOT-323 (SC-70) surface-mount package, which is ideal for space-constrained applications. It has a collector-emitter voltage (Vceo) of 30V, a collector current (Ic) of 100mA, and a power dissipation (Pd) of 200mW. These features ensure that the transistor can handle moderate voltage and current levels while maintaining a small footprint on the circuit board.

Key specifications of the BC848BWT1G include a DC current gain (hFE) range of 200 to 450, which provides a strong and reliable amplification factor for the signals passing through it. The device also boasts a low collector-emitter saturation voltage (Vce(sat)), which enhances its efficiency by reducing the voltage drop and power loss when in the on-state.

The BC848BWT1G is designed to offer high-speed switching performance, which is crucial for digital and high-frequency applications. Its fast switching times make it an excellent choice for oscillators, pulse circuits, and other applications where rapid signal transitions are necessary.

ON Semiconductor has ensured that the BC848BWT1G is compliant with RoHS standards, making it environmentally friendly by avoiding the use of hazardous substances in its construction. This commitment to sustainability, combined with the transistor's high performance and reliability, makes it a preferred choice for designers and engineers looking to create eco-friendly and efficient electronic products.

In summary, the ON Semiconductor BC848BWT1G is a high-quality NPN bipolar transistor that offers a blend of low noise, high gain, and fast switching capabilities. Its compact size and compliance with RoHS standards make it an ideal component for a variety of applications in the modern electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,735+ $0.0212 $57.9820
6,625+ $0.0175 $115.9375
10,275+ $0.0169 $173.6475
14,185+ $0.0163 $231.2155
18,250+ $0.0159 $290.1750
24,595+ $0.0141 $346.7895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 2735 pcs
Order Increment : 1 pcs
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