ON Semiconductor BC856BDW1T1G PNP Transistor

The BC856BDW1T1G from ON Semiconductor is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device is part of ON Semiconductor's broad portfolio of transistors, known for their reliability and performance in various electronic circuits.

Key Features

• Type: PNP Bipolar Junction Transistor (BJT)
• Configuration: Dual
• Package: SOT-363 (SC-88)
• Collector-Emitter Voltage (Vceo): 65V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 160 at 2mA, 5V
• Transition Frequency (fT): 100MHz
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The BC856BDW1T1G is suitable for a wide range of applications, including:

• Signal amplification
• Audio amplifiers
• Switching circuits
• Driver stages in hi-fi amplifiers and television circuits

Product Advantages

The BC856BDW1T1G offers several advantages for designers and engineers. Its dual configuration allows for compact circuit designs, saving space on PCBs. The SOT-363 package is optimized for low on-resistance and high-speed switching, making it an excellent choice for portable and power-sensitive applications. Additionally, the device's high transition frequency makes it suitable for AF amplifier applications.

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The BC856BDW1T1G is compliant with RoHS (Restriction of Hazardous Substances), ensuring that it does not contain harmful materials. Furthermore, the product adheres to ON Semiconductor's quality standards, ensuring reliable performance and longevity in your electronic projects.

Whether you're designing consumer electronics, industrial systems, or sophisticated audio equipment, the BC856BDW1T1G from ON Semiconductor is a versatile and reliable component that will enhance the performance of your applications.