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BC856BDW1T3G

Part No BC856BDW1T3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 65V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 1022485-BC856BDW1T3G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian BC856BDW1T3G CAD Model

Description

ON Semiconductor BC856BDW1T3G - PNP Bipolar Transistor

The BC856BDW1T3G from ON Semiconductor is a robust PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This high-performance transistor offers a blend of low voltage operation and high current handling, making it suitable for a wide range of electronic circuits.

Key Features:

  • Transistor Polarity: PNP - This type of transistor is controlled by the flow of holes and is typically used in negative ground configurations.
  • Collector-Emitter Voltage (Vceo): 65V - The maximum voltage that can be applied from the collector to the emitter without the transistor breaking down.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 250mW - The maximum power that the transistor can dissipate without damage.
  • DC Current Gain (hFE): 420 - A measure of the amplification factor of the transistor, indicating efficient current amplification.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - This wide temperature range ensures reliable operation in various environmental conditions.
  • Package / Case: SOT-323 - A small surface-mount package that is ideal for space-constrained applications.

Applications:

The BC856BDW1T3G is versatile and can be used in a variety of electronic circuits, including but not limited to:

  • Signal amplification in audio devices
  • Switching operations in power management systems
  • Driver stages in amplifiers and regulators
  • Load switching in portable electronics
  • Interface circuits between microcontrollers and peripherals

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the BC856BDW1T3G is no exception. It is manufactured to high standards, ensuring consistent performance and reliability for your electronic projects.

Whether you're designing consumer electronics, industrial control systems, or experimenting with DIY projects, the BC856BDW1T3G PNP transistor is an excellent choice for a reliable and efficient component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
380+ $0.1320 $50.1600
925+ $0.1083 $100.1775
1,430+ $0.1049 $150.0070
1,970+ $0.1016 $200.1520
2,550+ $0.0982 $250.4100
3,410+ $0.0880 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 380 pcs
Order Increment : 1 pcs
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