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Same model may have multiple batches, images only for reference.
BCV63B,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BCV63B,215

Part No BCV63B,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 30V/6V 0.1A SOT143B
Datasheet
BCV63B,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V, 6V
Max Vce (sat) 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V / 200 @ 2mA, 700mV
Maximum Power Dissipation 250mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-143B
Win Source Part Number 1022759-BCV63B,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCV63B,215 CAD Model

Description

The BCV63B,215 is a dual NPN transistor manufactured by Nexperia USA Inc.

  • Suitable for: use in discrete semiconductor products
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 200 @ 2mA and 5V
  • Maximum Power Dissipation: 250mW
  • Collector Cut-off Current (Max): 15nA (ICBO)
  • Supply and Demand Status: sufficient
  • Case/Package: SOT-143B
  • Frequency Transition: 100MHz

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190+ $1.5362 $291.8780
255+ $1.3779 $351.3645
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