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Same model may have multiple batches, images only for reference.
PBSS5160DS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS5160DS,115

Part No PBSS5160DS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 60V 0.77A 6TSOP
Datasheet
PBSS5160DS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 770mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 330mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 150 @ 500mA, 5V
Maximum Power Dissipation 420mW
Frequency - Transition 185MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1086503-PBSS5160DS,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS5160DS,115 CAD Model

Description

The PBSS5160DS,115 is a dual 2 PNP transistor polarity manufactured by Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Transistor Polarity: Dual 2 PNP
  • Frequency Transition: 185MHz
  • Temperature Range: Up to 150°C
  • Case/Package: 6-TSOP
  • Maximum Current Collector: 770mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
  • Max Vce (sat): 330mV @ 100mA, 1A
  • Collector Cut-Off Current (Max): 100nA
  • Typical Gain (hFE) (Min): 150 @ 500mA, 5V
  • Maximum Power Dissipation: 420mW
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Supply and Demand Status: Sufficient

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