The BC858BLT3G from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This semiconductor device is known for its low power consumption and excellent switching characteristics, making it an ideal choice for amplification and switching applications where space is at a premium.

Key Features

• Transistor Polarity: PNP - This transistor uses a PNP configuration which is commonly used in positive ground circuits or as a switch in various electronic devices.
• Collector-Emitter Voltage (VCEO): 30 V - The maximum voltage between collector and emitter terminals when the base terminal is open-circuit.
• Collector Current (IC): 100 mA - The maximum continuous current that can flow through the collector of the transistor.
• Power Dissipation (Pd): 250 mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
• DC Current Gain (hFE): 220 to 475 - A measure of the transistor's amplification capability in direct current conditions.
• Operating Temperature Range: -55°C to +150°C - The range within which the transistor can safely operate without risk of damage.
• Package / Case: SOT-23-3 - A small and lightweight surface-mount package that is suitable for automated assembly processes.

Applications

The BC858BLT3G is versatile and can be used in various electronic circuits. It is commonly found in:

• Signal amplification circuits
• Audio amplifiers
• Switching circuits
• Linear amplification stages
• Power management solutions
• Driver stages in high-fidelity amplifiers and audio equipment

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The BC858BLT3G transistor is manufactured to meet stringent quality standards, ensuring reliability and performance in demanding electronic designs. With ON Semiconductor's reputation for quality, designers can integrate this component with confidence into their electronic projects.