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BCX19LT1G

Part No BCX19LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.5A SOT23 / Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 620mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 011223-BCX19LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BCX19L
Introduction Date March 15, 1996
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BCX19LT1G CAD Model

Description

Product Overview: ON Semiconductor BCX19LT1G

The ON Semiconductor BCX19LT1G is a high-performance NPN Bipolar Junction Transistor (BJT) designed to meet the needs of a wide range of electronic applications. This versatile transistor is characterized by its low voltage operations and is ideally suited for low power consumption designs, making it an excellent choice for portable and battery-operated devices.

The BCX19LT1G features a collector-emitter voltage (VCEO) of 45V, collector current (IC) of 500mA, and a power dissipation of 625mW, ensuring it can handle moderate power applications with ease. Its high current gain bandwidth product and fast switching speeds make it suitable for amplification and switching applications where performance and efficiency are critical.

This transistor is housed in a small SOT-23 package, which is favored for its compact footprint and suitability for automated assembly processes. The size of the BCX19LT1G makes it an ideal choice for space-constrained applications such as mobile devices, wearable technology, and IoT devices.

Key Features:

  • NPN Silicon Transistor
  • Collector-Emitter Voltage: 45V
  • Collector Current: 500mA
  • Power Dissipation: 625mW
  • High Current Gain Bandwidth Product
  • Fast Switching Speeds
  • SOT-23 Package for Compact Design
  • RoHS Compliant and Pb-Free

Applications:

  • General Purpose Amplification
  • Switching Circuits
  • Power Management Functions
  • Signal Processing
  • Portable and Battery-Powered Devices
  • Consumer Electronics
  • IoT Devices

The BCX19LT1G is also environmentally friendly, complying with the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment. ON Semiconductor's commitment to sustainability ensures that the BCX19LT1G is not only a high-quality component but also an environmentally conscious choice for modern electronics design.

In summary, the BCX19LT1G from ON Semiconductor is a reliable and efficient NPN transistor that offers a blend of performance, size, and environmental compliance, making it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,055+ $0.0476 $50.2180
2,245+ $0.0446 $100.1270
3,485+ $0.0431 $150.2035
5,000+ $0.0400 $200.0000
6,495+ $0.0385 $250.0575
8,110+ $0.0370 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 1055 pcs
Order Increment : 1 pcs
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