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BD14016STU

Part No BD14016STU
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 1.5A TO126
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 38 Weeks
Features Bipolar (BJT) Transistor PNP 80 V 1.5 A - 1.25 W Through Hole TO-126-3
Manufacturer ON Semiconductor
Package Tube
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-225AA, TO-126-3
Case / Package TO-126-3
Family Name BD140
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1920
Popularity High
Supply and Demand Status Balance
Win Source Part Number 913136-BD14016STU
Ultra Librarian 3D Model Ultra Librarian BD14016STU CAD Model

Description

ON Semiconductor BD14016STU PNP Bipolar Transistor

The BD14016STU from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This device is particularly well-suited for power amplification and switching applications where high current and moderate voltage are required. The BD14016STU is part of ON Semiconductor's well-regarded portfolio of semiconductor components, known for their reliability and performance.

Key Features:

  • Type: PNP Bipolar Transistor
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector Current (IC): 1.5A
  • Power Dissipation (Pd): 12.5W
  • DC Current Gain (hFE): 40 to 250 at 500 mA
  • Operating Temperature Range: -55°C to +150°C
  • Package: Through-Hole, TO-126

The BD14016STU transistor offers a collector-emitter voltage of 80V, making it suitable for many medium voltage applications. With a collector current capability of 1.5A, it can handle significant power for a variety of circuits. The power dissipation of 12.5W ensures that the transistor can manage power without overheating, contributing to the overall durability of the device.

The transistor's DC current gain (hFE) ranges from 40 to 250 at a collector current of 500 mA. This gain indicates the transistor's amplification factor, which is essential for applications where signal amplification is required. The BD14016STU's ability to operate over a wide temperature range of -55°C to +150°C makes it versatile for use in harsh environments.

Encased in a TO-126 package, the BD14016STU is designed for through-hole mounting, which is compatible with standard PCB design and easy to handle in manufacturing and repairs. The device's robust package ensures mechanical durability and thermal stability.

In summary, the BD14016STU from ON Semiconductor is a reliable and efficient PNP transistor that offers a blend of high current capability, moderate voltage rating, and good amplification, making it an excellent choice for designers looking to build robust and high-performing electronic circuits.

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