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BFR31LT1

Part No BFR31LT1
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 225MW SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features JFET N-Channel 225 mW Surface Mount SOT-23-3 (TO-236)
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3 (TO-236)
Family Name BFR31
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 913315-BFR31LT1
Ultra Librarian 3D Model Ultra Librarian BFR31LT1 CAD Model

Description

The BFR31LT1 is a high-performance NPN silicon transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is well-suited for a wide range of applications, including signal processing, amplification, and switching. With its compact SOT-23 package, it is ideal for space-constrained designs, offering a blend of size efficiency and performance.

Key Features

  • High Current Gain Bandwidth Product: The BFR31LT1 boasts a high fT, making it suitable for applications requiring high-speed switching and amplification.
  • Low Voltage Operation: It operates at low voltages, thus ensuring compatibility with modern low-voltage circuits and reducing power consumption.
  • Surface-Mount Package: Housed in a SOT-23 package, the BFR31LT1 is designed for automated assembly processes and is ideal for high-volume production.
  • Robust Thermal Performance: Its design allows for efficient heat dissipation, ensuring reliability even under high switching frequencies or large power loads.
  • Lead-Free and RoHS Compliant: In alignment with global environmental standards, this transistor is lead-free and meets RoHS compliance, making it an eco-friendly choice for your electronic designs.

Applications

The versatile nature of the BFR31LT1 allows it to be used in a multitude of applications, including:

  • General-purpose signal amplification
  • Audio amplifiers
  • Switching circuits
  • Driver stages in hi-fi systems and TVs
  • Linear amplification and oscillator circuits

Technical Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 25 V Collector Base Voltage (Vcbo) 40 V Emitter Base Voltage (Vebo) 5 V Collector Current (Ic) 100 mA Power Dissipation (Pd) 225 mW DC Current Gain (hFE) 80 to 450 Transition Frequency (fT) 7 GHz

In summary, the BFR31LT1 from ON Semiconductor is a reliable and versatile NPN transistor that offers excellent performance for a variety of electronic applications. Its energy-efficient design, combined with a small footprint, makes it an excellent choice for modern, compact electronic devices.

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