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BS108G

Part No BS108G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 250MA TO92-3  /  N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Datasheet
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2V, 2.8V
Rds On (Max) @ Id, Vgs 8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Power Dissipation (Max) 350mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 Long Body
Base Product Number BS108
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1,000
Win Source Part Number 961516-BS108G
Ultra Librarian 3D Model Ultra Librarian BS108G CAD Model

Description

The ON Semiconductor BS108G is a high-performance N-Channel MOSFET designed for a wide range of applications, from power management to switching. This MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry. With its compact form factor and robust design, the BS108G is well-suited for space-constrained environments while delivering reliable performance.

Key Features

  • Low On-Resistance: The BS108G features a low on-resistance, which minimizes losses and improves efficiency, making it ideal for high-performance applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET offers quick response times, contributing to better performance in power conversion and management circuits.
  • Gate Charge: The device has been optimized to reduce gate charge, which enhances the overall switching performance and reduces power dissipation.
  • Thermal Performance: With its excellent thermal characteristics, the BS108G can operate at higher temperatures, ensuring reliability even under thermal stress.
  • Voltage Rating: The device boasts a drain-source voltage rating of 200V, providing a wide safety margin for various applications.
  • Package: Available in a TO-92 package, the BS108G offers a balance between size and thermal performance, making it suitable for both commercial and industrial applications.

Applications

The versatility of the BS108G MOSFET allows it to be used in a multitude of applications including:

  • Power supplies and DC-DC converters
  • Motor control circuits
  • Lighting and LED drivers
  • Switch mode power supplies (SMPS)
  • Load/relay drivers
  • Power management for consumer electronics

ON Semiconductor's BS108G is an ideal choice for designers looking for a MOSFET that offers both high efficiency and durability. Whether it's for industrial automation, consumer electronics, or automotive applications, the BS108G delivers performance that engineers can rely on.

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