ON Semiconductor CPH6332-TL-E MOSFET

The ON Semiconductor CPH6332-TL-E is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for power management applications. This P-Channel MOSFET is a reliable component for designers looking to achieve efficient power control and conversion in their electronic designs.

Key Features:

• Device Type: P-Channel MOSFET
• Configuration: Single
• Drain-Source Voltage (V<sub>DS): -30V
• Continuous Drain Current (I<sub>D): -6A
• Power Dissipation (P<sub>D): 1.25W
• Gate-Source Voltage (V<sub>GS): ±20V
• Static Drain-Source On-Resistance (R<sub>DS(on)): 45 mΩ at V<sub>GS = -10V
• Package: CPH-3 (SuperSOT™-6)

The CPH6332-TL-E MOSFET offers a compact form factor with its SuperSOT™-6 package, which is ideal for space-constrained applications. Its low on-resistance ensures minimal power loss and heat generation, making it suitable for high-efficiency power systems. The device also features fast switching speeds, which contribute to improved performance in switching applications such as DC-DC converters, power supplies, and motor drives.

With a robust thermal performance, the CPH6332-TL-E can handle continuous high currents, making it a great choice for applications that demand reliability and durability. Its built-in ESD protection enhances the safety and longevity of the device when incorporated into sensitive electronic circuits.

Overall, the ON Semiconductor CPH6332-TL-E MOSFET is a versatile and efficient solution for a wide range of power management tasks. Its combination of low on-resistance, high current capability, and fast switching speeds make it an excellent choice for designers aiming to optimize their power systems for both performance and size.