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DTA115TET1G

Part No DTA115TET1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.2W SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SC-75
Win Source Part Number 096885-DTA115TET1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DTA115TET1G CAD Model

Description

Product Overview: DTA115TET1G - ON Semiconductor

The DTA115TET1G is a high-quality PNP bipolar transistor from ON Semiconductor, a leading figure in the semiconductor industry. This transistor is designed for general-purpose amplifier applications and offers a robust solution for various electronic circuit designs. It's an essential component for engineers and designers looking for reliable and efficient performance in their electronic projects.

Key Features

  • Transistor Type: PNP - This indicates that the transistor is designed for positive-negative-positive configuration, making it suitable for use in certain types of circuits where a PNP transistor is required.
  • Current - Collector (Ic) (Max): 100mA - The DTA115TET1G can handle a maximum collector current of 100 milliamperes, providing ample current handling capability for a wide range of applications.
  • Voltage - Collector Emitter Breakdown (Max): 50V - With a maximum collector-emitter breakdown voltage of 50 volts, this transistor can be used in circuits with moderate voltage requirements without the risk of breakdown.
  • Resistor - Base (R1) (Ohms): 10k - The built-in base resistor of 10 kilo-ohms helps to simplify circuit design by reducing the number of external components required.
  • Resistor - Emitter Base (R2) (Ohms): 10k - Similarly, the emitter base resistor of 10 kilo-ohms adds to the convenience and integration of the component within a circuit.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V - The DTA115TET1G offers a minimum DC current gain of 100 at 5mA and 10V, ensuring effective amplification characteristics.
  • Power - Max: 250mW - The maximum power dissipation of 250 milliwatts ensures that the transistor can handle a reasonable amount of power without overheating.
  • Mounting Type: Surface Mount - This product is designed for surface mount technology (SMT), which allows for a more compact and efficient design on printed circuit boards (PCBs).
  • Package / Case: TO-236-3, SC-59, SOT-23-3 - The DTA115TET1G comes in a small and versatile package, suitable for automated assembly processes and space-constrained applications.

Applications

The DTA115TET1G is ideal for use in a variety of electronic applications, including but not limited to signal processing, power management, and audio amplifiers. Its small form factor and efficient operation make it a preferred choice for portable and compact designs. Whether you are working on consumer electronics, automotive systems, or industrial controls, the DTA115TET1G provides the performance and reliability that ON Semiconductor is known for.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,145+ $0.0184 $57.8680
7,635+ $0.0152 $116.0520
11,815+ $0.0147 $173.6805
16,265+ $0.0142 $230.9630
21,010+ $0.0138 $289.9380
28,040+ $0.0124 $347.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,600 pieces
MOQ: 3145 pcs
Order Increment : 1 pcs
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