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FCB110N65F

Part No FCB110N65F
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 650V 35A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 35A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 17.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 3.5mA
Gate Charge (Qg) (Maximum) at Vgs 145nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4895pF at 100V
Power Dissipation (Maximum) 357W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 730898-FCB110N65F
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FCB110N65F CAD Model

Description

The FCB110N65F is a high-performance power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of the SuperFET® II series, which is known for its high efficiency and reliability in power conversion applications. The FCB110N65F is specifically designed to meet the requirements of today's sophisticated electronic circuits, providing a perfect solution for high-power switching and power supply designs.

Key Features

  • Advanced Super Junction Technology: The FCB110N65F utilizes ON Semiconductor's cutting-edge Super Junction Technology, which significantly reduces on-resistance and minimizes switching losses, leading to superior performance in power conversion efficiency.
  • High Current Capability: With a continuous drain current (ID) of 110A, this MOSFET can handle high current applications with ease, making it ideal for demanding environments.
  • High Voltage Threshold: The device is designed to withstand voltages up to 650V, providing a robust solution for high voltage applications.
  • Low Gate Charge: The low gate charge (Qg) characteristic of the FCB110N65F allows for faster switching speeds, which translates into improved performance and reduced switching losses.
  • Optimized Capacitance Profile: The tailored capacitance profile ensures low output capacitance (Coss) and reverse transfer capacitance (Crss), which enhances the overall efficiency of the device.

Applications

The FCB110N65F is suitable for a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • High power density servers
  • Switch Mode Power Supplies (SMPS)
  • Welding equipment
  • Induction heating systems
  • Electric vehicle charging stations

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The FCB110N65F is subject to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. This commitment to quality makes the FCB110N65F a trusted component in any power management system.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official datasheets and support documentation provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.9604 $53.7624
14+ $7.3522 $102.9308
22+ $7.1224 $156.6928
30+ $6.8927 $206.7810
38+ $6.6629 $253.1902
51+ $5.9736 $304.6536
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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