The FCPF380N60 is a state-of-the-art N-Channel MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This high-performance field-effect transistor is designed to meet the demands of a wide variety of power applications, especially in AC-DC power supplies, power inverters, and motor drives.

Key Features

• High Voltage Capability: With a drain-to-source voltage (Vdss) of 600V, the FCPF380N60 is suitable for high voltage applications, ensuring reliability and robustness in challenging environments.
• Low On-Resistance: The device boasts an extremely low on-resistance (Rds(on)) of 380 mΩ, which translates to reduced conduction losses and improved efficiency in power conversion systems.
• Fast Switching Speed: The MOSFET is designed with fast switching speed in mind, which is critical for reducing switching losses and improving the performance of power electronic systems.
• High Current Capacity: With a continuous drain current (Id) of up to 11 A, the FCPF380N60 can handle significant current, making it suitable for high-power applications.
• Low Gate Charge: The low gate charge (Qg) of the MOSFET ensures minimal power dissipation during switching, contributing to the overall efficiency of the system.

Applications

The ON Semiconductor FCPF380N60 is ideal for a variety of applications that require high efficiency and power density. Its robustness and reliability make it an excellent choice for:

• Power supply units for servers, telecom, and data centers
• Uninterruptible power supplies (UPS)
• Power inverters for renewable energy systems such as solar inverters
• Industrial motor drives and controls
• Electric vehicle (EV) charging infrastructure

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the stringent requirements of the power electronics industry. The FCPF380N60 MOSFET is no exception, with its design and manufacturing processes geared towards ensuring long-term reliability and performance under various operating conditions.