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FDB14AN06LA0

Part No FDB14AN06LA0
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ | MOSFET N-CH 60V 67A TO-263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 10A, 67A
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 11.6mOhm at 67A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-263AB
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1173703-FDB14AN06LA0
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDB14AN06LA0 CAD Model

Description

Introducing the FDB14AN06LA0 MOSFET from ON Semiconductor

ON Semiconductor's FDB14AN06LA0 is a state-of-the-art N-channel PowerTrench<sup>® MOSFET designed for high-efficiency power management applications. This advanced MOSFET technology is tailored for AC-DC conversion, motor drives, and other power switching applications where efficiency is paramount.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Current Capability: With a continuous drain current of 38A, the FDB14AN06LA0 is capable of handling high current loads, making it suitable for demanding applications.
  • Fast Switching: The MOSFET is engineered for fast switching, enabling high-frequency operation that can lead to smaller and more efficient power supplies.
  • PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology minimizes on-state resistance while maintaining superior switching performance, which is crucial for reducing power losses in high-speed switching applications.
  • Robust Thermal Performance: The FDB14AN06LA0 comes in a TO-263 package, known for its excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.

Applications

The versatility of the FDB14AN06LA0 MOSFET makes it an ideal choice for a broad range of applications, including:

  • Power supplies for servers, telecom, and industrial use
  • DC-DC converters
  • Synchronous rectification
  • Motor control circuits
  • Battery management systems
  • Load switch applications

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the FDB14AN06LA0 is no exception. It is designed to meet rigorous industry standards, ensuring long-term reliability and performance in the field. With ON Semiconductor's expertise in power management technology, you can expect this MOSFET to deliver exceptional performance and efficiency.

Whether you're designing a new power system or upgrading an existing one, the FDB14AN06LA0 from ON Semiconductor is a superb choice that combines efficiency, reliability, and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7152 $60.0320
85+ $1.4068 $119.5780
130+ $1.3629 $177.1770
180+ $1.3190 $237.4200
230+ $1.2751 $293.2730
305+ $1.1435 $348.7675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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