The FDB86569-F085 from ON Semiconductor is a high-performance, N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. With its advanced technology, this MOSFET provides low on-state resistance and minimal gate charge, making it an ideal choice for high-efficiency power supplies, motor controls, and other power-intensive applications.
Key Features
- RDS(on): The FDB86569-F085 boasts an exceptionally low on-state resistance, contributing to reduced conduction losses and improved overall efficiency in your circuit designs.
- High Current Capability: This MOSFET is capable of handling high current loads, making it suitable for demanding applications that require robust power delivery.
- Fast Switching Speed: The device's fast switching speed ensures minimal switching losses and is advantageous in high-frequency power converters and PWM applications.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology enhances the MOSFET's performance by optimizing the cell structure for reduced gate charge and lower RDS(on).
Applications
The versatile FDB86569-F085 MOSFET can be utilized in a variety of applications, including:
- DC/DC converters
- Power supply units
- Motor drives
- Automotive applications
- Power management systems
Product Specifications
Parameter
Value
Drain-Source Voltage (VDSS)
40V
Continuous Drain Current (ID)
15A
Power Dissipation (PD)
48W
Operating Temperature Range
-55°C to +175°C
The FDB86569-F085 is a testament to ON Semiconductor's commitment to providing innovative, high-quality components for modern electronic systems. Whether you're designing for industrial, automotive, or consumer markets, this MOSFET is engineered to deliver reliable and efficient performance.