The FDD6688-NL from ON Semiconductor is a state-of-the-art PowerTrench® MOSFET designed to deliver high efficiency and power density for a wide array of applications. This advanced semiconductor device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.
Key Features
- Low Gate Charge (Qg): The FDD6688-NL features a low gate charge, which facilitates faster switching speeds, thereby improving the efficiency of the power conversion process.
- High Power Dissipation: With an impressive power dissipation capability, this MOSFET can handle high currents, making it suitable for demanding applications.
- Optimized for Fast Switching: The device is engineered for applications that require high-speed switching, ensuring minimal losses and improved performance.
- RDS(on) Specified at VGS of 10V and 4.5V: This specification provides flexibility in design, allowing for the use in various circuit topologies.
- High Performance Trench Technology: ON Semiconductor's PowerTrench® technology is designed to minimize on-state resistance while maintaining superior switching performance, which is critical for power efficiency.
Applications
The FDD6688-NL MOSFET is ideal for a broad range of applications, including:
- Power Supply Conversion
- DC-DC Converters
- Motor Drives
- Power Management Functions
- Automotive Systems
- Renewable Energy Systems
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
30V |
| Continuous Drain Current (ID) |
85A |
| Power Dissipation (PD) |
48W |
| RDS(on) |
7.5mΩ @ VGS = 10V |
With its robust design and advanced technology, the ON Semiconductor FDD6688-NL MOSFET is a reliable and efficient choice for designers looking to optimize their power management systems.