The ON Semiconductor FDMS6674BZ is a high-performance, N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is an optimal solution for systems requiring a combination of low on-resistance and high switching speed.
Key Features
- Low On-Resistance: The FDMS6674BZ boasts an extremely low on-resistance (R<sub>DS(on)) of just 6.5 mΩ at V<sub>GS = 10V, minimizing conduction losses and improving overall efficiency.
- High Current Capability: This MOSFET can handle a continuous drain current (I<sub>D) of up to 31A, making it suitable for high-power applications.
- PowerTrench® Technology: ON Semiconductor’s proprietary PowerTrench® process optimizes the device for low gate charge (Q<sub>g), reduced capacitance, and fast switching performance.
- Thermal Management: The FDMS6674BZ is housed in a compact 8-Pin Power 56 package, which provides excellent thermal performance and a small footprint on the PCB.
- High Performance: With fast switching speeds and a robust body diode, this MOSFET is ideal for synchronous rectification in DC/DC converters, motor drives, and other power switching applications.
Applications
The FDMS6674BZ is versatile and can be used in various applications, such as:
- Power supply circuits
- DC/DC converters
- Motor control systems
- Server and telecom power systems
- Battery management systems
- Load switches
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
30V
Gate-Source Voltage (V<sub>GS)
±20V
Continuous Drain Current (I<sub>D)
31A
Power Dissipation (P<sub>D)
3.8W
Operating Temperature Range
-55°C to +150°C
The ON Semiconductor FDMS6674BZ is a reliable and efficient choice for designers looking to improve power density and efficiency in their systems.
