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FDV301N_G

Part No FDV301N_G
Manufacturer ON Semiconductor
Catalog OEM Parts (F - I)
Description Contact for details
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 960274-FDV301N_G
Categories OEM Parts(F-I)
Manufacturer ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDV301N_G CAD Model

Description

ON Semiconductor FDV301N_G N-Channel MOSFET

The FDV301N_G from ON Semiconductor is a high-performance, N-Channel MOSFET that exemplifies efficiency and reliability in a compact SOT-23 package. This versatile transistor is designed to meet the stringent requirements of modern electronic circuits, providing a mix of low on-resistance and minimal gate charge, making it an excellent choice for a wide range of applications, including load switch and power management tasks.

With its advanced technology, the FDV301N_G boasts an impressive continuous drain current (I<sub>D) of 220 mA, making it suitable for handling moderate power requirements. The device operates at a maximum drain-source voltage (V<sub>DSS) of 25V, which ensures a good margin for typical low to medium voltage applications. The low threshold voltage (V<sub>GS(th)) of just 1.5V (min) to 3.0V (max) allows for operation at lower gate drive voltages, which can be particularly beneficial in battery-operated circuits where power conservation is crucial.

ON Semiconductor has designed the FDV301N_G with a R<sub>DS(on) as low as 3.1Ω at V<sub>GS = 4.5V, ensuring minimal power loss across the transistor when it's in the on-state, thereby enhancing overall energy efficiency. This feature is especially important in portable applications where extending battery life is a priority.

The device also features fast switching speeds, which is a critical attribute for high-frequency applications. This speed, combined with the low input capacitance (C<sub>iss), results in reduced switching losses, enabling more efficient operation at higher frequencies.

Thermal management is also a strong point for the FDV301N_G, as its SOT-23 package is designed for optimal heat dissipation, ensuring reliable performance even under high load conditions. This thermal efficiency, coupled with the device's inherent ruggedness, provides a robust solution that designers can rely on for their most demanding applications.

In summary, the FDV301N_G N-Channel MOSFET from ON Semiconductor is a testament to the company's commitment to providing high-quality, energy-efficient solutions for the electronics industry. Its combination of low on-resistance, high-speed switching, and efficient thermal management makes it an ideal choice for designers looking to optimize their power management systems.

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