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FFSP0665A

Part No FFSP0665A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V TO220-2 / Diode Silicon Carbide Schottky 650 V 8.8A (DC) Through Hole TO-220-2L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8.8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 361pF @ 1V, 100kHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number FFSP0665
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 2156-FFSP0665A-488,FFSP0665AOS
Standard Package 50
Win Source Part Number 1095485-FFSP0665A
Ultra Librarian 3D Model Ultra Librarian FFSP0665A CAD Model

Description

The ON Semiconductor FFSP0665A is a state-of-the-art Silicon Carbide (SiC) Power MOSFET that is designed for high-efficiency power conversion applications. This advanced semiconductor device is part of ON Semiconductor's portfolio of energy-efficient power solutions, which are instrumental in reducing global energy use. The FFSP0665A is optimized for high-frequency power electronics systems, such as electric vehicle chargers, solar inverters, and switch-mode power supplies.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (VDS) of 650V, the FFSP0665A can handle high voltage applications, providing a wide safety margin for electrical systems.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of just 65 mΩ, which minimizes conduction losses and improves overall efficiency.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Qrr) ensures that the MOSFET can switch rapidly, reducing switching losses and enabling high-frequency operation.
  • High-Temperature Operation: The FFSP0665A is capable of operating at junction temperatures up to 175°C, making it suitable for demanding environments and ensuring reliability under thermal stress.

Applications

The FFSP0665A is designed for a variety of applications where efficiency and power density are critical. Some typical applications include:

  • Electric Vehicle (EV) Charging Stations
  • Solar Power Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Frequency DC-DC Converters
  • Energy Storage Systems

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and quality. The FFSP0665A complies with various international standards, ensuring that it meets the highest levels of quality and environmental responsibility. These certifications include RoHS compliance for the restriction of hazardous substances and adherence to the REACH regulation, ensuring safe use and handling of chemicals in the manufacturing process.

With its combination of high performance, efficiency, and reliability, the ON Semiconductor FFSP0665A Silicon Carbide Power MOSFET is an excellent choice for designers looking to enhance the performance of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2468 $51.9488
33+ $3.0413 $100.3629
52+ $2.9386 $152.8072
74+ $2.7331 $202.2494
96+ $2.6303 $252.5088
119+ $2.5276 $300.7844
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 530 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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