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FJH1100

Part No FJH1100
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description Ultra Low Leakage Diode | DIODE GEN PURP 15V 150MA DO35
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 15V
Current - Average Rectified (Io) 150mA (DC)
Voltage - Forward (Vf) (Maximum) at If 1.07V at 100mA
Speed Small Signal =
Current - Reverse Leakage at Vr 10pA at 15V
Capacitance at Vr, F 2pF at 0V, 1MHz
Mounting Style Through Hole
Manufacturer Package DO-204AH, DO-35, Axial
Supplier Device Package DO-35
Operating Temperature - Junction 175°C (Maximum)
Manufacturer Pack Quantity 5,000
MSL Level 1 (Unlimited)
Win Source Part Number 1174329-FJH1100
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FJH1100 CAD Model

Description

The ON Semiconductor FJH1100 is a high-voltage, high-speed power NPN transistor designed to deliver exceptional performance in a wide range of applications. This versatile component is well-suited for demanding environments, offering robustness and reliability for designers and engineers working on power management, switching, and amplification tasks.

Key Features:

  • High Voltage Capability: The FJH1100 is capable of handling high voltage operations, making it ideal for use in power supplies and other circuits that require a high breakdown voltage.
  • Fast Switching Speed: With its rapid switching capabilities, this transistor is perfect for applications that demand quick response times, such as switching regulators and converters.
  • High Current Rating: The device can manage significant current levels, which is beneficial for high-power applications and enables efficient power handling.
  • Low Saturation Voltage: The low V<sub>CE(sat) contributes to reduced power dissipation, enhancing overall system efficiency.
  • Durable Construction: ON Semiconductor's commitment to quality means the FJH1100 is built to last, with a rugged design that can withstand challenging conditions.

Applications:

The FJH1100's combination of high-speed switching, high-voltage handling, and high current capability makes it an excellent choice for a broad spectrum of applications, including:

  • Power supply circuits
  • Motor controllers
  • Power inverters
  • Switching regulators
  • Audio amplifiers
  • High-frequency drivers

Technical Specifications:

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 400 V Collector Current (I<sub>C) 10 A Power Dissipation (P<sub>D) 80 W Operating Junction Temperature (T<sub>J) -55°C to +150°C

Overall, the ON Semiconductor FJH1100 NPN transistor is a reliable and high-performing component that meets the stringent requirements of modern electronic designs. Its combination of power, speed, and efficiency makes it a valuable asset in any high-voltage or high-power application.

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