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FJN4301RTA

Part No FJN4301RTA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 300MW TO92-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 10mA, 5V
Vce Saturation (Maximum) at Ib, Ic 300mV at 500μA, 10mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power 300mW
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Family Part Number FJN4301
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 753235-FJN4301RTA
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FJN4301RTA CAD Model

Description

ON Semiconductor FJN4301RTA PNP Transistor

The ON Semiconductor FJN4301RTA is a high-performance PNP bipolar transistor designed for use in a wide variety of electronic applications. This transistor is well-suited for amplification and switching purposes thanks to its robust characteristics and reliable performance.

Key Features:

  • Transistor Polarity: PNP - This indicates that the transistor is a PNP type, which means it is controlled by the flow of holes and conducts when a sufficient positive voltage is applied to its base terminal.
  • Collector-Emitter Voltage (VCEO): 100V - The maximum voltage that can be applied from the collector to the emitter without the transistor breaking down when the base terminal is open.
  • Collector Current (IC): -1A - The maximum continuous current that can flow from the collector to the emitter, indicating the transistor's capability to handle power.
  • Power Dissipation (Pd): 1.2W - The amount of power in watts that the transistor can dissipate through heat without deteriorating, ensuring longevity and stable operation.
  • DC Current Gain (hFE): 40 to 320 - A measure of the transistor's ability to amplify the current, representing the ratio of the collector current to the base current.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - The range of temperatures within which the transistor can safely operate or be stored without sustaining damage.

Applications:

The FJN4301RTA is ideal for a variety of applications, including but not limited to:

  • Switching regulators
  • Inverters
  • Interface circuits
  • Driver circuits
  • Amplifier stages

Package and Quality:

ON Semiconductor's FJN4301RTA comes in a TO-92 package, known for its compact size and ease of mounting on printed circuit boards. The product adheres to ON Semiconductor's commitment to high-quality standards, ensuring both reliability and performance for critical electronic designs.

Conclusion:

Whether for industrial, commercial, or consumer electronics, the FJN4301RTA is a versatile and robust PNP transistor that offers designers a reliable component with a well-balanced set of characteristics. ON Semiconductor's dedication to quality means that this transistor is a dependable choice for your circuit needs.

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