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FQA10N80C

Part No FQA10N80C
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 10A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 58nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2800pF at 25V
Power Dissipation (Maximum) 240W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1175148-FQA10N80C
Manufacturer Homepage www.fairchildsemi.com
Family Name FQA10N80C
Introduction Date September 10, 2006
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA10N80C CAD Model

Description

The ON Semiconductor FQA10N80C is a high-performance, N-Channel QFET® MOSFET designed to deliver robust performance for a variety of applications. This power MOSFET features a drain-source voltage (V<sub>DS) of 800V, which makes it suitable for high voltage applications that require efficient power conversion and switching.

Key Features

  • High Drain-Source Voltage: With a V<sub>DS of 800V, the FQA10N80C is capable of handling high voltage requirements, which is essential for industrial, power supply, and lighting applications.
  • Low Gate Charge (Q<sub>G): The device has been optimized for low gate charge, which reduces switching losses and improves overall efficiency in high-frequency switching applications.
  • Low Crss (Reverse Transfer Capacitance): The minimized reverse transfer capacitance ensures lower feedback capacitance and faster switching capabilities.
  • High Current Capability: This MOSFET can handle a continuous drain current (I<sub>D) of 10A, making it suitable for high current applications.
  • High Avalanche Energy Rating (E<sub>AS): It is designed to withstand high energy pulses in the avalanche and commutation mode, which is critical for reliable operation under harsh conditions.

Applications

The FQA10N80C is ideal for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Electronic Lamp Ballasts
  • Induction Heating
  • High Voltage DC-DC Converters

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the FQA10N80C is no exception. The device is RoHS compliant and is designed to meet the rigorous standards set by the industry, ensuring long-term reliability and performance in the field.

Summary

The FQA10N80C from ON Semiconductor is a robust, high-voltage, and high-performance N-Channel MOSFET that offers a blend of efficiency and reliability for a variety of power applications. With its high current capability, low gate charge, and high avalanche energy rating, this MOSFET is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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