The FQB4N50TM is a high-performance, N-channel QFET® MOSFET brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET utilizes state-of-the-art technology to provide excellent RDS(on) and low gate charge, making it a perfect choice for a wide range of applications that require efficiency and reliability.

Key Features

• Voltage: The FQB4N50TM operates at a drain-source voltage of 500V, making it suitable for high voltage applications.
• Current: It supports a continuous drain current of 4.5A, ensuring robust performance for a variety of electronic circuits.
• RDS(on): This device boasts a low on-resistance of typically 1.38 ohms, which enhances its efficiency by minimizing power loss during operation.
• Gate Charge: With a low total gate charge (Qg) of 14 nC, it ensures fast switching performance, which is crucial for power conversion and management applications.
• Package: Housed in a TO-263 (D2PAK) package, the FQB4N50TM is designed for optimal heat dissipation and space-saving on PCBs.

Applications

The FQB4N50TM is ideal for a variety of applications, including:

• Power supply units
• DC-DC converters
• Motor control systems
• Lighting systems
• High-efficiency switch mode power supplies (SMPS)

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The FQB4N50TM MOSFET is no exception, as it is manufactured under stringent conditions to ensure optimal performance in even the most demanding environments. With its robust design and superior electrical characteristics, the FQB4N50TM is a testament to ON Semiconductor's dedication to excellence in the field of power management and conversion technology.