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FQPF12N60

Part No FQPF12N60
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 600V N-Channel MOSFET | MOSFET N-CH 600V 5.8A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 5.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 700mOhm at 2.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 55W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175465-FQPF12N60
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF12N60 CAD Model

Description

Overview of FQPF12N60 from ON Semiconductor

The FQPF12N60 is a cutting-edge N-Channel QFET® MOSFET provided by ON Semiconductor, a leading figure in the semiconductor industry. This MOSFET is designed to offer high efficiency, low on-resistance, and a fast switching performance, making it an ideal choice for a variety of applications, including power supplies, lighting, PFC (Power Factor Correction), and other power management solutions.

Key Features

  • Voltage and Current Ratings: The FQPF12N60 operates with a drain-source voltage (V<sub>DS) of 600V, which is suitable for high-voltage applications. It also has a continuous drain current (I<sub>D) of 12A, providing robust current handling capability.
  • Low On-Resistance: With a typical on-resistance (R<sub>DS(on)) of just 0.52Ω, this MOSFET ensures minimal power loss and heat generation during operation, thus improving overall efficiency.
  • Fast Switching: The device is engineered for fast switching, which is crucial for reducing switching losses and improving performance in high-frequency circuits.
  • High Avalanche Energy Rating: The FQPF12N60 is designed to withstand high energy pulses in the avalanche and commutation modes, which makes it highly reliable in harsh operating conditions.

Thermal and Mechanical Properties

  • The MOSFET comes in a TO-220F package, which is known for its good thermal characteristics, allowing for efficient heat dissipation.
  • Its robust package design ensures a strong mechanical endurance, which is vital for long-term reliability.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • DC-AC Inverters for Solar Power Systems
  • Industrial Control Systems
  • High Efficiency DC-DC Converters

The FQPF12N60 from ON Semiconductor is more than just a MOSFET; it is a versatile and reliable component that can be a cornerstone in the design of energy-efficient and high-performance electronic systems. With its impressive electrical characteristics and robust design, it stands out as a preferred choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9653 $57.9180
150+ $0.7921 $118.8150
230+ $0.7673 $176.4790
315+ $0.7426 $233.9190
405+ $0.7179 $290.7495
540+ $0.6436 $347.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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