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FQPF6N40C

Part No FQPF6N40C
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 400V N-Channel MOSFET | MOSFET N-CH 400V 6A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 625pF at 25V
Power Dissipation (Maximum) 38W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175489-FQPF6N40C
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF6N40C CAD Model

Description

ON Semiconductor FQPF6N40C MOSFET Overview

The FQPF6N40C from ON Semiconductor is a robust and efficient N-channel QFET® MOSFET designed for a wide array of applications. This power MOSFET is engineered to deliver high performance with a 400V drain-source breakdown voltage (V<sub>DS) and a continuous drain current (I<sub>D) of up to 6 A at 25°C. The device is particularly suitable for high voltage power management applications where energy efficiency is a priority.

Key Features

  • R<sub>DS(on) Performance: The FQPF6N40C features a low on-state resistance (R<sub>DS(on)) of 1.0 Ohm, which helps in reducing conduction losses and improving overall system efficiency.
  • High Voltage Capability: With a maximum drain-source voltage of 400V, this MOSFET can handle high voltage applications with ease, making it ideal for switch mode power supplies (SMPS), lighting, and industrial power applications.
  • Gate Charge: The device boasts a low total gate charge (Q<sub>G) that results in reduced switching losses, contributing to energy-saving in high-frequency operations.
  • TO-220F Package: Enclosed in a TO-220F package, the FQPF6N40C offers a compact form factor along with excellent thermal characteristics, ensuring reliability even under high-temperature operating conditions.

Applications

The FQPF6N40C is versatile and can be used in a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • PFC (Power Factor Correction) circuits
  • Motor drives
  • Inverters
  • LED lighting solutions

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FQPF6N40C is no exception. It is designed to meet the stringent requirements of the industrial market. The device is RoHS compliant, ensuring that it meets the latest environmental standards and is free from hazardous materials.

In summary, the FQPF6N40C MOSFET from ON Semiconductor is a highly reliable and efficient solution for designers looking to optimize their power management systems. Its robustness and high voltage capability make it an excellent choice for a broad range of high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,239 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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