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HUF75321D3S

Part No HUF75321D3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 20A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 36mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 680pF at 25V
Power Dissipation (Maximum) 93W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1,800
MSL Level 1 (Unlimited)
Win Source Part Number 1182428-HUF75321D3S
Manufacturer Homepage www.intersil.com/cda/home
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75321D3S CAD Model

Description

ON Semiconductor HUF75321D3S N-Channel Power MOSFET

The HUF75321D3S is a high-performance N-Channel Power MOSFET produced by ON Semiconductor, renowned for its efficiency and reliability in a wide range of power switching applications. This MOSFET is designed to handle significant power levels while maintaining low on-resistance and high switching speeds, making it an ideal choice for power supply and conversion systems, motor drives, and other high-efficiency power management designs.

Key Features

  • High Current Handling: With a continuous drain current (I<sub>D) rating of 75A, the HUF75321D3S can handle high current applications with ease.
  • Low On-Resistance: Featuring a low on-resistance (R<sub>DS(on)) of just 8.0 mΩ at V<sub>GS = 10V, this MOSFET ensures minimal power loss and heat generation during operation.
  • High-Speed Switching: The fast switching characteristics of the HUF75321D3S make it suitable for high-frequency applications, contributing to improved overall efficiency.
  • Robust Package: Encased in a TO-252AA package, the device offers a compact footprint while providing excellent thermal performance and ruggedness.
  • Gate Charge Optimized: The device has an optimized gate charge (Q<sub>G) that helps to reduce switching losses without compromising on the conduction losses.

Applications

The HUF75321D3S is versatile and can be used in a variety of applications, including:

  • DC to DC converters
  • Switch Mode Power Supplies (SMPS)
  • Motor controllers for automotive and industrial systems
  • Power management for computing and telecom
  • Battery management systems
  • Load switching applications

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 55V Continuous Drain Current (I<sub>D) 75A On-Resistance (R<sub>DS(on)) 8.0 mΩ Total Gate Charge (Q<sub>G) 45 nC Package TO-252AA

With its robust construction and superior electrical characteristics, the ON Semiconductor HUF75321D3S N-Channel Power MOSFET stands out as a top choice for designers seeking to optimize their power management systems for both performance and cost-effectiveness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7266 $58.1280
195+ $0.5962 $116.2590
300+ $0.5777 $173.3100
415+ $0.5590 $231.9850
535+ $0.5403 $289.0605
720+ $0.4844 $348.7680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,064 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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