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KSP10TA

Part No KSP10TA
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description RF TRANS NPN 25V 650MHZ TO92-3 / RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors
Mfr ON Semiconductor
Series -
Package Cut Tape (CT)Tape & Box (TB)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 650MHz
Noise Figure (dB Typ @ f) -
Gain -
Power - Max 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
Current - Collector (Ic) (Max) -
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number KSP10
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000 pcs
Win Source Part Number 1382442-KSP10TA
Ultra Librarian 3D Model Ultra Librarian KSP10TA CAD Model

Description

ON Semiconductor KSP10TA High Voltage NPN Transistor

The ON Semiconductor KSP10TA is a high voltage NPN bipolar junction transistor (BJT) designed for use in a variety of electronic applications where a robust and reliable transistor is required. This component is particularly well-suited for applications that demand high voltage capabilities and fast switching times. The KSP10TA offers outstanding performance with a collector-emitter voltage (VCEO) of 25V, collector-base voltage (VCBO) of 40V, and emitter-base voltage (VEBO) of 5V. This makes it an excellent choice for signal amplification, switching, and in circuits that require high voltage tolerances.

The KSP10TA comes in a TO-92 package, which is widely used for through-hole mounting. This package is known for its ease of installation and its robustness, making it suitable for a wide range of operating environments. The transistor features a continuous collector current (IC) rating of 200mA, allowing it to handle moderate levels of current without overheating or failing.

One of the key advantages of the KSP10TA is its high gain bandwidth product (fT) of 200MHz. This high transition frequency ensures that the transistor can handle applications that require fast switching and accurate signal amplification at high frequencies. Additionally, the device boasts a low collector-emitter saturation voltage, which contributes to its efficiency by minimizing power loss during operation.

The ON Semiconductor KSP10TA also features a low noise figure, making it an excellent choice for audio applications and other sensitive electronic circuits where signal integrity is paramount. Its high input impedance and fast switching capabilities make it an ideal choice for digital and analog circuits alike.

ON Semiconductor's commitment to quality ensures that the KSP10TA transistor is a reliable and durable component. It is designed to meet or exceed industry standards for performance and reliability, making it a trusted choice for engineers and manufacturers. Whether you're designing consumer electronics, industrial control systems, or complex signal processing circuits, the KSP10TA from ON Semiconductor is a versatile and high-performing component that will meet the demands of your application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,145+ $0.0184 $57.8680
7,635+ $0.0152 $116.0520
11,815+ $0.0147 $173.6805
16,265+ $0.0142 $230.9630
21,010+ $0.0138 $289.9380
28,040+ $0.0124 $347.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,290 pieces
MOQ: 3145 pcs
Order Increment : 1 pcs
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