ON Semiconductor M74VHC1GT125DT1G Single Buffer Gate

The M74VHC1GT125DT1G from ON Semiconductor is a high-speed CMOS single non-inverting buffer gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device is designed for use in voltage translation applications where the low power dissipation and high noise immunity of CMOS is desired.

Featuring a 3-state output stage, the M74VHC1GT125DT1G is capable of driving up to 8 LSTTL loads over the full operating temperature range. The 3-state function allows the output to assume a high impedance state, effectively disconnecting the output from the circuit, which is a crucial feature in multiplexing applications. This characteristic also makes it suitable for interfacing with bus lines in a bus-organized system.

This single buffer gate is designed for 2V to 5.5V VCC operation, providing a wide range of power supply compatibility, making it versatile for various applications. The input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This can occur when the input is at a high state and the power supply is at a low state, providing additional safety to the device during abnormal operating conditions.

The M74VHC1GT125DT1G comes in a compact SOT-353 package, which is ideal for space-constrained applications. It features balanced propagation delays and output transition times, which contribute to its reliable high-speed performance. The device's multiple package options also provide flexibility in design for board layout considerations.

ON Semiconductor's commitment to quality ensures that the M74VHC1GT125DT1G meets stringent standards for performance and reliability. It is a suitable choice for a wide range of applications, including signal buffering, driving heavy loads, logic level shifting, and bus interfacing, making it an essential component for electronic designers seeking a robust and versatile logic gate solution.

Key Features:

• High Speed: tPD = 3.9 ns (typ.) at VCC = 5V
• Low Power Dissipation: ICC = 2 μA (max) at TA = 25°C
• 3-State Outputs for Connection to System Buses
• Wide Operating Voltage Range: VCC = 2V to 5.5V
• Input Hysteresis for Improved Noise Immunity: 1V (typ.) at VCC = 5V
• Supports Live Insertion and Withdrawal
• ESD Performance: HBM > 2000V; MM > 200V
• Lead-Free and RoHS Compliant