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MBT35200MT1

Part No MBT35200MT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS SW PNP BIPOL 35V 2A TSOP-6
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 35 V
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V
Power - Max 625 mW
Frequency - Transition 100MHz
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Product Number MBT35200
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 633856-MBT35200MT1
Ultra Librarian 3D Model Ultra Librarian MBT35200MT1 CAD Model

Description

ON Semiconductor MBT35200MT1 Overview

The MBT35200MT1 is a state-of-the-art bipolar junction transistor (BJT) product from ON Semiconductor, a leading provider of semiconductor-based solutions. This device is designed for general-purpose amplifier and switching applications, offering high performance and reliability in a compact SOT-23 package.

Key Features

  • High Current Gain: The MBT35200MT1 boasts a high current gain (beta) value, which ensures efficient amplification in electronic circuits.
  • Low Voltage Operations: It is capable of operating at low voltages, making it suitable for battery-powered devices and low-voltage applications.
  • Energy Efficiency: With its low saturation voltage, the transistor minimizes power loss and heat generation, contributing to the overall energy efficiency of the system.
  • Compact Form Factor: The small footprint of the SOT-23 package allows for high-density mounting and is ideal for space-constrained applications.
  • RoHS Compliant: The MBT35200MT1 is designed to meet the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice.

Applications

The versatile nature of the MBT35200MT1 makes it a suitable transistor for a wide range of applications, including:

  • Signal amplification in audio and video equipment
  • Driver stages in power amplifiers
  • Switching circuits in consumer electronics
  • Control systems in industrial automation
  • Power management in portable devices

Technical Specifications

The MBT35200MT1 offers the following technical specifications:

  • Collector-Emitter Voltage (VCEO): 30V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100 - 600
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products, and the MBT35200MT1 is no exception. It undergoes rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Whether for consumer electronics or industrial applications, the MBT35200MT1 from ON Semiconductor is an excellent choice for designers looking for a reliable and efficient transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2674 $50.8060
460+ $0.2195 $100.9700
710+ $0.2126 $150.9460
975+ $0.2057 $200.5575
1,260+ $0.1989 $250.6140
1,685+ $0.1783 $300.4355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,781 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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