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MCH6331-TL-E

Part No MCH6331-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.5A MCPH6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 5nC @ 10V
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 98 mOhm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MCPH
Dimension 6-SMD, Flat Leads
Win Source Part Number 044617-MCH6331-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH6331-TL-E CAD Model

Description

The MCH6331-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET designed for advanced power management and switching applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient, robust, and reliable components for a wide array of electronic systems.

Key Features

  • Low On-Resistance: The MCH6331-TL-E boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET is ideal for applications that require rapid on-off cycles, ensuring minimal energy waste and enhanced performance.
  • P-Channel Device: As a P-Channel MOSFET, it typically allows for simpler drive circuitry in certain configurations compared to N-Channel MOSFETs, especially in high-side switching applications.
  • Compact Package: The MCH6331-TL-E is available in a compact TSMT-3 package, making it suitable for space-constrained applications without compromising on power handling capability.

Applications

The versatility of the MCH6331-TL-E allows it to be used in a variety of applications, including, but not limited to:

  • Power Management Systems
  • Load Switches
  • Battery Management
  • DC/DC Converters
  • Motor Control Circuits

Specifications

Some of the key specifications of the MCH6331-TL-E are:

  • Drain-Source Voltage (Vdss): -30V
  • Continuous Drain Current (Id): -6A
  • Power Dissipation (Pd): 1.25W
  • Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C

Reliability and Quality

ON Semiconductor is renowned for its high standards in manufacturing and quality control. The MCH6331-TL-E is built to not only meet but exceed industry standards for performance and reliability, ensuring that it can withstand the rigors of demanding applications.

Conclusion

In summary, the MCH6331-TL-E from ON Semiconductor is an exceptional P-Channel MOSFET that offers low on-resistance, high-speed switching, and a compact form factor, making it a top choice for designers looking to optimize their power management and switching systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2860 $58.6300
495+ $0.2347 $116.1765
765+ $0.2275 $174.0375
1,050+ $0.2201 $231.1050
1,360+ $0.2128 $289.4080
1,820+ $0.1907 $347.0740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,650 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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