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MGB20N36CL

Part No MGB20N36CL
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT D2PAK 360V CL / IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1014951-MGB20N36CL
Ultra Librarian 3D Model Ultra Librarian MGB20N36CL CAD Model

Description

ON Semiconductor MGB20N36CL IGBT - Product Overview

The MGB20N36CL is a robust insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This high-performance IGBT is designed to cater to a wide range of power electronics applications that require high efficiency, fast switching, and reliability. It is particularly well-suited for motor control, power supply, and inverter applications, among others.

Key Features

      
  • High Current Capability: The MGB20N36CL is capable of handling continuous collector currents up to 20A, making it suitable for high-power applications.
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  • High Voltage: With a collector-emitter voltage (Vce) of 360V, this IGBT can be used in circuits with high operational voltages, providing ample headroom for a variety of industrial applications.
  •   
  • Low On-State Voltage Drop: The device exhibits a low Vce(sat) at nominal currents, which translates to reduced power loss and improved efficiency in operation.
  •   
  • Fast Switching Speed: The MGB20N36CL boasts fast switching characteristics, which minimizes transition losses and allows for higher frequency operation.
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  • Co-Packaged Free Wheeling Diode: A fast and soft recovery diode is included in the package, which is essential for efficient switching and reducing electromagnetic interference (EMI).

Advanced Technology

ON Semiconductor's advanced IGBT technology ensures that the MGB20N36CL provides superior performance in terms of speed and efficiency. The device leverages a trench gate field-stop structure that optimizes the balance between conduction and switching losses, making it an excellent choice for energy-sensitive applications.

Durability and Reliability

The MGB20N36CL is built to withstand harsh conditions and is characterized by its ruggedness and high reliability. It is designed to offer a long operational life, even in demanding environments. The package is RoHS compliant, ensuring that it meets current environmental standards for electronic components.

Applications

With its combination of high power handling, efficiency, and speed, the MGB20N36CL from ON Semiconductor is an ideal choice for a variety of applications, including:

      
  • AC and DC motor drives
  •   
  • Uninterruptible power supplies (UPS)
  •   
  • Power factor correction (PFC) circuits
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  • Induction heating
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  • Renewable energy inverters, such as solar and wind

Overall, the MGB20N36CL IGBT stands out as a high-performance component that enhances the operation of power electronic systems, contributing to energy savings and system reliability.

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