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MGSF1N02LT1G

Part No MGSF1N02LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 750MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Input Capacitance 125pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 023221-MGSF1N02LT1G
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian MGSF1N02LT1G CAD Model

Description

ON Semiconductor MGSF1N02LT1G N-Channel MOSFET

The MGSF1N02LT1G is a high-performance N-Channel MOSFET from ON Semiconductor, designed to deliver efficient power management and signal processing in a compact SOT-23 package. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) and low gate charge, making it an ideal choice for a wide range of applications, including load switches, power management circuits, and various switching applications.

Key Features:

  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring it can be used in low voltage applications and is compatible with logic-level signals.
  • High Current Capacity: With a continuous drain current of 680 mA, the MGSF1N02LT1G can handle significant current, making it suitable for power-intensive applications.
  • Low RDS(on): It boasts a low on-state resistance of just 1.25 Ohm at VGS = 4.5V, which translates to reduced power losses and improved efficiency in operation.
  • High-Speed Switching: The MOSFET features fast switching speeds, which is crucial for applications that require quick response times.
  • Energy Efficiency: Its low power consumption makes it an environmentally friendly option for designers looking to reduce energy usage in their circuits.
  • SOT-23 Package: The small footprint of the SOT-23 package allows for a more compact design, saving space on PCBs without compromising performance.

Applications:

  • Power Management
  • DC/DC Converters
  • Battery Powered Systems
  • Motor Control
  • Load Switching

The MGSF1N02LT1G is a testament to ON Semiconductor's commitment to providing state-of-the-art electronic components that meet the evolving needs of modern circuit designs. With its robust construction and reliable performance, this MOSFET is an excellent choice for designers who require a dependable and efficient switching solution.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet and ON Semiconductor's technical resources to ensure proper integration of the MGSF1N02LT1G into their projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1725 $50.0250
710+ $0.1415 $100.4650
1,095+ $0.1371 $150.1245
1,510+ $0.1327 $200.3770
1,950+ $0.1283 $250.1850
2,610+ $0.1150 $300.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 96,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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