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MMBD5817LT1G

Part No MMBD5817LT1G
Manufacturer ON Semiconductor
Catalog HOT - SALES and EOL Components (M)
Sample
Rohs State rohs
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Manufacturer ON Semiconductor
Win Source Part Number 235103-MMBD5817LT1G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBD5817LT1G CAD Model

Description

Product Overview: MMBD5817LT1G by ON Semiconductor

The MMBD5817LT1G is a high-performance Schottky barrier diode designed by ON Semiconductor, renowned for its precision and reliability in the semiconductor industry. This diode is engineered to offer low forward voltage drop, fast switching capabilities, and high conductivity, making it an ideal choice for a wide range of applications, including power management, voltage clamping, and signal demodulation.

Key Features

  • Low Forward Voltage Drop: The MMBD5817LT1G boasts a low forward voltage drop, which enhances system efficiency by reducing power loss during the diode's conduction phase.
  • Fast Switching Speed: With its fast switching characteristics, this diode is capable of handling high-frequency operations, which is crucial for modern electronic circuits.
  • High Current Capability: The device can handle a substantial current, making it suitable for high-load applications.
  • Surface Mount Package: It comes in a compact SOT-23 package, which is designed for automated assembly processes and is suitable for high-density PCB designs.
  • RoHS Compliant: The MMBD5817LT1G adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is environmentally friendly and free from harmful substances.

Applications

The versatility of the MMBD5817LT1G allows it to be used in various electronic circuits and systems. Some of the common applications include:

  • Power supply circuits
  • DC-DC converters
  • Automotive applications
  • Portable devices and battery-powered gadgets
  • Reverse voltage protection circuits

Technical Specifications

The MMBD5817LT1G diode is characterized by its technical specifications that ensure optimal performance in its intended applications. Some of the key specifications include:

  • Package: SOT-23
  • Peak Repetitive Reverse Voltage: 20V
  • Forward Continuous Current: 1A
  • Max Forward Voltage at 1A: 0.525V
  • Max Reverse Leakage Current at 20V: 200µA
  • Operating Temperature Range: -55°C to +125°C

ON Semiconductor's MMBD5817LT1G is a testament to the company's commitment to providing high-quality semiconductor solutions that cater to the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4,275+ $0.0117 $50.0175
10,420+ $0.0096 $100.0320
16,130+ $0.0093 $150.0090
22,225+ $0.0090 $200.0250
28,740+ $0.0087 $250.0380
38,465+ $0.0078 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,250 pieces
MOQ: 4275 pcs
Order Increment : 1 pcs
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