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MMBT3904LT3G

Part No MMBT3904LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.2A SOT23 / Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023749-MMBT3904LT3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name MMBT3904L
Introduction Date December 03, 2003
ECCN EAR99
Country of Origin China, Japan, Malaysia
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MMBT3904LT3G CAD Model

Description

ON Semiconductor MMBT3904LT3G NPN Bipolar Transistor

The MMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar (BJT) transistor that is widely used in a variety of electronic applications. This small-signal transistor is designed for general-purpose amplifier and switching applications, and it is known for its reliability and performance.

This particular model comes in a compact SOT-23 surface-mount package, which makes it suitable for use in space-constrained applications. The MMBT3904LT3G is characterized by a collector-emitter voltage (VCEO) of 40V, collector-base voltage (VCBO) of 60V, and emitter-base voltage (VEBO) of 6V. With a continuous collector current (IC) rating of 200mA, it can handle moderate levels of current, making it suitable for driving small loads.

The ON Semiconductor MMBT3904LT3G offers excellent amplification properties with a DC current gain (hFE) range of 100 to 300, ensuring a consistent and predictable performance in signal amplification. The device also features a low collector-emitter saturation voltage, which contributes to its efficiency by minimizing power loss during operation.

Its fast switching speed makes the MMBT3904LT3G an ideal choice for high-frequency applications and for circuits that require rapid switching between on and off states. Additionally, it has a low noise figure, which is crucial for applications where signal integrity is of utmost importance.

The robustness of the MMBT3904LT3G is further exemplified by its high tolerance to thermal and electrical stress. It has an operating junction temperature range of -55°C to +150°C, ensuring stability and functionality across a wide range of environmental conditions.

As a product of ON Semiconductor, a leading semiconductor solutions provider, the MMBT3904LT3G benefits from the company's commitment to quality. This makes it a reliable choice for manufacturers and hobbyists alike who require a dependable general-purpose transistor for their electronic projects.

In summary, the ON Semiconductor MMBT3904LT3G is a highly efficient, reliable, and versatile NPN transistor that offers excellent performance for a wide array of electronic applications. Its compact form factor, combined with its electrical characteristics, makes it a valuable component for both commercial and experimental projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,620+ $0.0191 $50.0420
5,590+ $0.0179 $100.0610
8,675+ $0.0173 $150.0775
12,500+ $0.0160 $200.0000
16,235+ $0.0154 $250.0190
20,275+ $0.0148 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 140,630 pieces
MOQ: 2620 pcs
Order Increment : 1 pcs
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