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MMBT5089LT1G

Part No MMBT5089LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 0.05A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 500mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 400 @ 100μA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023772-MMBT5089LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MMBT5089LT1G CAD Model

Description

Product Overview: MMBT5089LT1G by ON Semiconductor

The MMBT5089LT1G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading company in energy-efficient innovations. This semiconductor device is specifically engineered to provide excellent amplification and switching characteristics, making it an ideal choice for a wide range of electronic applications.

Key Features

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: SOT-23 surface-mount package for compact design
  • Configuration: Single transistor configuration for ease of use
  • Collector-Emitter Voltage (Vceo): 25V, suitable for medium voltage applications
  • Collector Current (Ic): 50mA, providing sufficient current handling for a variety of circuits
  • Power Dissipation (Pd): 225mW, ensuring reliable operation under normal conditions
  • DC Current Gain (hFE): High hFE value, offering efficient current amplification
  • Transition Frequency (fT): High transition frequency for fast switching applications
  • Operating Temperature Range: -55°C to +150°C, allowing for usage in extreme environmental conditions

Applications

The MMBT5089LT1G transistor is versatile and can be used in various electronic circuits. It is particularly well-suited for:

  • Signal amplification in audio and radio frequency (RF) applications
  • Switching operations in digital and analog circuits
  • Driver stages in amplifiers and other electronic devices
  • General-purpose use in consumer electronics, medical devices, and industrial equipment

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The MMBT5089LT1G is produced with strict quality control measures, ensuring that each transistor meets the company's high standards for performance and reliability. Customers can trust this component for consistent operation and longevity in their electronic projects.

Environmental Compliance

In line with global environmental standards, the MMBT5089LT1G is designed to be environmentally friendly. It complies with RoHS directives, making it free from hazardous substances and suitable for use in green products.

With its robust features and reliable performance, the MMBT5089LT1G from ON Semiconductor is an excellent choice for designers and engineers looking to incorporate a dependable NPN transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,640+ $0.0305 $50.0200
3,985+ $0.0251 $100.0235
6,175+ $0.0243 $150.0525
8,515+ $0.0235 $200.1025
11,015+ $0.0227 $250.0405
14,710+ $0.0204 $300.0840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 1640 pcs
Order Increment : 1 pcs
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