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MMBT6428LT1G

Part No MMBT6428LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 250 @ 100μA, 5V
Maximum Power Dissipation 225mW
Frequency - Transition 700MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078276-MMBT6428LT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MMBT6428LT1G CAD Model

Description

ON Semiconductor MMBT6428LT1G NPN Bipolar Transistor

The MMBT6428LT1G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This device is an essential component for a wide range of electronic applications, offering efficient amplification and switching capabilities.

Key Features:

  • Transistor Type: NPN - This type of transistor effectively amplifies electrical signals and can switch high-speed circuits with ease.
  • Voltage Ratings: It boasts a collector-emitter voltage (Vceo) of 80V, ensuring it can handle significant voltage levels without breakdown.
  • Current Capacity: The MMBT6428LT1G can manage a continuous collector current (Ic) of up to 500mA, making it suitable for moderate power applications.
  • Power Dissipation: With a power dissipation (Pd) of 225mW, this transistor can endure moderate levels of power without overheating, ensuring reliable performance.
  • High Gain Bandwidth Product: It features a transition frequency (ft) of 50MHz, which means it can operate effectively at high-frequency ranges.
  • Package: The device comes in a SOT-23 package, which is known for its small footprint and is ideal for space-constrained applications.

Applications:

The MMBT6428LT1G is versatile and can be used in various electronic circuits, including:

  • Signal Amplification: Its ability to amplify signals makes it suitable for audio amplifiers, radio receivers, and other analog circuits.
  • Switching Applications: With its high-speed switching capabilities, it is ideal for use in digital circuits, such as logic gates and memory devices.
  • Power Management: Its power handling capabilities make it suitable for power regulation circuits, DC-DC converters, and battery management systems.

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the MMBT6428LT1G is no exception. It is designed to meet or exceed industry standards for performance and reliability. The device is RoHS compliant, ensuring adherence to environmental regulations and a commitment to sustainability.

Whether you're designing consumer electronics, industrial machinery, or automotive systems, the MMBT6428LT1G from ON Semiconductor is a reliable and efficient choice for your NPN transistor needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
955+ $0.0524 $50.0420
2,330+ $0.0430 $100.1900
3,600+ $0.0417 $150.1200
4,965+ $0.0403 $200.0895
6,415+ $0.0390 $250.1850
8,575+ $0.0350 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,000 pieces
MOQ: 955 pcs
Order Increment : 1 pcs
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