ON Semiconductor MMBTA56LT3G PNP Transistor

The MMBTA56LT3G is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is ideal for amplification and switching applications, offering a combination of low voltage operation and high current capability.

Key Features

• Type: PNP
• Package: SOT-23 surface-mount
• Collector-Emitter Voltage (V_CEO): -80V
• Collector Current (I_C): -500mA
• Power Dissipation (P_D): 225mW
• DC Current Gain (h_FE): 100 to 300 at I_C = -10mA
• Operating and Storage Junction Temperature Range: -55°C to +150°C
• Moisture Sensitivity Level (MSL): 1

The MMBTA56LT3G transistor is housed in a compact SOT-23 package, making it suitable for space-constrained applications. Its high collector-emitter voltage of -80V ensures that it can handle significant voltage levels, while the collector current rating of -500mA allows for substantial current flow through the device.

With a power dissipation of 225mW, this transistor can manage moderate power levels, making it a versatile component in various electronic circuits. The DC current gain is another critical parameter, with values ranging from 100 to 300 at a collector current of -10mA, indicating efficient current amplification capabilities.

Designed to withstand harsh conditions, the MMBTA56LT3G operates within a wide temperature range of -55°C to +150°C. Its robustness is further enhanced by its classification as a Moisture Sensitivity Level (MSL) 1 component, meaning it has a high resistance to moisture-induced damage during soldering and other manufacturing processes.

Whether you're designing power management systems, consumer electronics, or industrial controls, the MMBTA56LT3G from ON Semiconductor offers reliable performance in a small footprint, making it an excellent choice for your circuit design needs.