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MMUN2111LT1G

Part No MMUN2111LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024083-MMUN2111LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2111LT1G CAD Model

Description

ON Semiconductor MMUN2111LT1G: Bipolar (BJT) Transistor PNP Pre-Biased

The MMUN2111LT1G from ON Semiconductor is a versatile PNP pre-biased bipolar junction transistor (BJT) that offers a compact and efficient solution for a wide range of low-power applications. This semiconductor device is designed to streamline circuit design by integrating a biasing resistor network, simplifying the overall circuit complexity and reducing component count.

Constructed with ON Semiconductor's high-quality manufacturing processes, the MMUN2111LT1G features a monolithic bias resistor network and is encapsulated in a space-saving SOT-23 surface-mount package. This makes it an ideal choice for automated assembly lines and applications where board space is at a premium.

The device boasts a collector-emitter voltage (V<sub>CEO) of 50V and a continuous collector current (I<sub>C) of 100mA, providing ample headroom for a variety of low to medium power applications. Its integrated resistors have values of 47 kΩ for the series base resistor (R1) and 47 kΩ for the base-emitter resistor (R2), which are optimized to ensure low voltage operation and minimal power loss.

Key applications for the MMUN2111LT1G include signal processing, power management, and control systems where a PNP transistor is needed to interface with microcontrollers, drive LEDs, or operate in switch mode. Its pre-biased configuration is especially useful in voltage reference and amplification circuits, as it reduces the need for additional external components.

With its excellent saturation characteristics and high current gain bandwidth product, this transistor is also well-suited for use in audio amplifiers, low-noise signal processing, and other analog circuits where performance and efficiency are critical.

ON Semiconductor's commitment to quality ensures that the MMUN2111LT1G provides reliable and consistent performance across its intended applications. Whether you're designing consumer electronics, industrial control systems, or portable devices, this pre-biased PNP transistor is an excellent choice for streamlining your design while maintaining high functionality.

Overall, the MMUN2111LT1G is a testament to ON Semiconductor's dedication to providing innovative, high-performance components that meet the evolving needs of modern electronics design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,705+ $0.0185 $50.0425
6,580+ $0.0152 $100.0160
10,205+ $0.0147 $150.0135
13,990+ $0.0143 $200.0570
18,120+ $0.0138 $250.0560
24,195+ $0.0124 $300.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 711,000 pieces
MOQ: 2705 pcs
Order Increment : 1 pcs
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