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MMUN2132LT1G

Part No MMUN2132LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 15 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024086-MMUN2132LT1G
Ultra Librarian 3D Model Ultra Librarian MMUN2132LT1G CAD Model

Description

Product Overview: MMUN2132LT1G

The MMUN2132LT1G is a high-quality bipolar transistor from ON Semiconductor, a leading manufacturer in the semiconductor industry. This PNP transistor is designed with a focus on performance and reliability, making it a preferred choice for a wide range of applications in the electronics sector.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, which means it is controlled by the movement of holes and is typically used with a negative base.
  • Configuration: Single - The MMUN2132LT1G is a single transistor, making it suitable for applications where one transistor is sufficient to control the current flow.
  • Collector- Emitter Voltage (VCEO): 50V - It can withstand up to 50 volts across the collector-emitter junction, providing a good range for various electronic designs.
  • Collector Current - Continuous (IC): 100mA - The transistor can handle a continuous collector current of up to 100 milliamperes.
  • Power Dissipation (Pd): 225mW - With a power dissipation of 225 milliwatts, the MMUN2132LT1G can manage a moderate amount of power for its size and construction.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V - The transistor has a minimum DC current gain of 80 when operating at 10mA and 5V, indicating efficient current amplification.
  • Operating Temperature: -55°C to +150°C - The device can operate over a wide temperature range, making it suitable for harsh environments.
  • Mounting Type: Surface Mount - The MMUN2132LT1G is designed for surface mounting, which allows for more compact and dense PCB designs.
  • Package / Case: SOT-23-3 - The transistor is housed in a small SOT-23-3 package, which is widely used in the industry for its small footprint.

Applications

The MMUN2132LT1G is ideal for a variety of applications, including but not limited to:

  • Signal processing
  • Power management
  • Amplification and switching applications
  • Consumer electronics
  • Industrial and medical equipment

With its robust design and reliable performance, the MMUN2132LT1G from ON Semiconductor is an excellent choice for designers and engineers looking for a dependable PNP transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,410+ $0.0355 $50.0550
3,440+ $0.0291 $100.1040
5,320+ $0.0282 $150.0240
7,330+ $0.0273 $200.1090
9,470+ $0.0264 $250.0080
12,660+ $0.0237 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71,400 pieces
MOQ: 1410 pcs
Order Increment : 1 pcs
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