ON Semiconductor MMUN2133LT1G: Bipolar (BJT) Transistor Array

The MMUN2133LT1G from ON Semiconductor is a versatile and efficient bipolar junction transistor (BJT) array designed for applications requiring dual transistors with matching characteristics. This product is a perfect solution for designers looking to streamline their circuit designs by incorporating multiple transistors in a single, compact package. The MMUN2133LT1G is especially suitable for use in current mirror and differential amplifier configurations, which are common in analog signal processing applications.

Key Features

• Type: PNP
• Configuration: Dual
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 120 to 240 at 10mA at 5V
• Power Dissipation: 225mW
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• RoHS: Compliant

Applications

The MMUN2133LT1G transistor array is ideal for a wide range of applications, including, but not limited to:

• Current mirrors
• Differential amplifiers
• Signal processing
• Analog switches
• General-purpose amplification

Product Advantages

The MMUN2133LT1G offers several advantages for electronic circuit designers. The matching characteristics of the dual PNP transistors ensure consistent performance, which is critical in precision applications. The integration of two transistors into a single SOT-23-3 package saves valuable board space, which is particularly beneficial in compact or portable electronic devices. Additionally, the device's high voltage and current ratings, along with a wide operating temperature range, make it a robust choice for challenging environments.

ON Semiconductor's commitment to quality and performance is evident in the MMUN2133LT1G, making it a reliable and efficient choice for your electronic designs requiring matched bipolar transistors.